Piezoelectric oxide semiconductor field effect transistor touch sensing devices

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors

In this letter, we examine the potential of a functional device that can have good transistor and stress sensor properties. The device examined is based on the use of a thin oxide with high piezoelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage or by stress. We examine the performance of two classes of heterostructures that are important semi...

Liquid Crystal-on-Organic Field-Effect Transistor Sensory Devices for Perceptive Sensing of Ultralow Intensity Gas Flow Touch

We demonstrate liquid crystal-on-organic field-effect transistor (LC-on-OFET) sensory devices that can perceptively sense ultralow level gas flows. The LC-on-OFET devices were fabricated by mounting LC molecules (4-cyano-4'-pentylbiphenyl - 5CB) on the polymer channel layer of OFET. Results showed that the presence of LC molecules on the channel layer resulted in enhanced drain currents due to ...

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Lateral n-channel enhancement-mode GaN metal-oxide-semiconductor MOS field-effect transistors and lateral capacitors have been fabricated on a p-type epi-GaN substrate semiconductor and electrically characterized at different temperatures. A clear positive behavior of the inversion channel mobility with temperature has been obtained. A physics-based model on the inversion charge and charge trap...